| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 2107+ | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP80NF12 from STMicroelectronics, is suitable for various power switching applications. It features a maximum drain-source voltage (Vdss) of 120V and can handle a continuous drain current (Id) of 80A at case temperature.
The device has a low on-state resistance (Rds On) of 18mOhm at 40A and 10V gate drive voltage, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is 2V at 250µA, and it operates with a gate-to-source voltage (Vgs) up to ±20V.
Packaged in a standard TO-220-3 configuration, the STP80NF12 is designed for through-hole mounting. It has a maximum power dissipation of 300W at case temperature and an operating temperature range of -55°C to 175°C (TJ).
Key electrical characteristics include an input capacitance (Ciss) of 4300 pF at 25V and a gate charge (Qg) of 189 nC at 10V. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
TO-220-3 (through-hole).
-55°C to 175°C (junction).
80A at case temperature.
18 milliohms maximum at 40A and 10V gate drive.
189 nC at 10V gate-source voltage.
2V maximum at 250µA drain current.