| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP80NF06 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications and features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at a case temperature (Tc).
Key electrical characteristics include a low on-resistance (Rds On) of 8mOhm at 40A and 10V gate drive voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The device has a maximum gate-to-source voltage of ±20V and an input capacitance (Ciss) of 3850 pF at 25V. The gate charge (Qg) is 150 nC at 10V.
With a maximum power dissipation of 300W (Tc) and an operating junction temperature of up to 175°C, this MOSFET is suitable for demanding thermal environments. It utilizes MOSFET (Metal Oxide) technology.
The STP80NF06 comes in a TO-220-3 package and is designed for through-hole mounting. Its robust construction and specifications make it a reliable choice for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-220-3 through-hole package.
175°C.
8mOhm at 40A and 10V gate drive.
150nC at 10V.
80A at case temperature.