| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP80N340K6 is a discrete N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for applications requiring high voltage capabilities, featuring a maximum Drain to Source Voltage (Vdss) of 800V.
Key electrical characteristics include a maximum On-Resistance (Rds On) of 340mOhm at 6A and 10V, and a Gate Charge (Qg) of 17.8 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 115W (Tc).
Packaged in a TO-220-3 configuration, the STP80N340K6 is suitable for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient switching and power handling.
This MOSFET is specified with a Gate Source Voltage (Vgs) maximum of ±30V and a Gate Threshold Voltage (Vgs(th)) of 4V at 100µA. The input capacitance (Ciss) is rated at 950 pF at 400V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
12A at case temperature.
340mOhm maximum at 6A, 10V.
-55°C to 150°C junction temperature.
TO-220-3 through-hole.
17.8nC at 10V.
4V maximum at 100µA.