| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP80N240K6 is an 800V N-Channel power MOSFET belonging to the MDmesh™ K6 series. It is designed for high-voltage applications, featuring a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 16A at a case temperature of 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 220mOhm at 7A and 10V gate drive, a gate charge (Qg) of 25.9 nC at 10V, and an input capacitance (Ciss) of 1350 pF at 100V. The gate threshold voltage (Vgs(th)) is typically 4V at 100µA, and the maximum gate-to-source voltage (Vgs) is ±30V.
This MOSFET has a maximum power dissipation rating of 140W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. It is housed in a TO-220-3 through-hole package, making it suitable for breadboard and perfboard applications and compatible with existing footprints and heatsink clips.
The STP80N240K6 is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
16A at Tc=25°C.
220mOhm at Id=7A, Vgs=10V.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package.
25.9nC maximum at Vgs=10V.
1350pF maximum at Vds=100V.