STP7NB60 The STP7NB60 is an N-Channel MOSFET from STMicroelectronics designed for high current, high speed switching applications. It offers a 600V breakdown voltage and a 7.2A continuous drain current.
Mfr Part #:

STP7NB60

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP7NB60 is an N-Channel MOSFET from STMicroelectronics designed for high current, high speed switching applications. It offers a 600V breakdown voltage and a 7.2A continuous drain current.
✓ Total Stock: 2,568 pcs
$ Price Range: $2.56

STP7NB60 Available from 1 distributor

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✓ Non-Authorised
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2,568 pcs
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STP7NB60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP7NB60 Description

Short technical summary and product information.

The STP7NB60 is a PowerMESH™ N-Channel MOSFET from STMicroelectronics, built using advanced high voltage MESH OVERLAY™ process. It features a breakdown voltage of 600V and a continuous drain current of 7.2A at 25°C case temperature. The device boasts a typical RDS(on) of 1.0 Ω, extremely high dv/dt capability, and minimized gate charge, making it suitable for high current, high speed switching applications.

 

This MOSFET is designed for applications such as Switch Mode Power Supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives. It is packaged in a TO-220 package with through-hole mounting.

 

Key electrical characteristics include a maximum continuous drain current of 4.5A at 100°C, a pulsed drain current of 28.8A, and a total power dissipation of 125W at 25°C. The gate-source voltage (Vgs) maximum is ±30V, with a threshold voltage (Vgs(th)) of 5V at 250µA. The on-resistance (Rds On) is a maximum of 1.2 Ω at 3.6A drain current and 10V gate-source voltage. Input capacitance (Ciss) is 1625 pF at 25V, and gate charge (Qg) is a maximum of 45 nC at 10V.

 

The operating junction temperature is rated up to 150°C. Thermal data indicates a junction-to-case thermal resistance of 1.0°C/W for the TO-220 package. The device is 100% avalanche tested and offers exceptional avalanche and dv/dt capabilities.

STP7NB60 Quick Information

Product Type: MOSFET
Canonical Name: STP7NB60 N-Channel 600V 7.2A Power MOSFET
Subcategory: N-Channel

STP7NB60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP7NB60 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP7NB60 Features

  • 600V drain-source breakdown voltage.
  • 7.2A continuous drain current.
  • 1.0 Ohm typical on-resistance.
  • High dv/dt capability.
  • TO-220 package, through hole mounting.

STP7NB60 Applications

  • High current, high speed switching.
  • Switch Mode Power Supplies (SMPS).
  • DC-AC converters.
  • Welding equipment.
  • Motor drive applications.

STP7NB60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

600V.

What is the package type?

TO-220-3 through-hole.

What is the maximum operating junction temperature?

150°C.

What is the continuous drain current at 25°C?

7.2A.

What is the typical on-resistance?

1.0 ohm.

What is the gate charge?

45 nC at Vgs=10V.

What is the power dissipation?

125W at case temperature 25°C.

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