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4,100 pcs
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4100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STP7N60M2 is a power MOSFET from STMicroelectronics, designed for various electronic applications. This N-Channel device features a high drain-source breakdown voltage of 600V and can handle a continuous drain current of 5A.
Key electrical characteristics include a maximum drain-source on-resistance of 950mOhm at 2.5A and 10V, and a gate charge of 8.8nC at 10V. The gate-source voltage has a maximum rating of ±25V, with a threshold voltage of 4V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-220 package, suitable for through-hole mounting. The device has a power dissipation rating of 60W.
The STP7N60M2 is part of the MDmesh II series, offering efficient performance for power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) for the STP7N60M2 is 600V.
The STP7N60M2 MOSFET has a continuous drain current of 5A.
The STP7N60M2 is supplied in a TO-220-3 package.
The operating temperature range for the STP7N60M2 is -55°C to 150°C.
The STP7N60M2 is RoHS3 Compliant.
The Rds On is a maximum of 950mOhm at 2.5A and 10V, or 860mOhm at 5A and 10V.
The maximum gate charge (Qg) for the STP7N60M2 is 8.8 nC at 10V.