| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP75NS04Z is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vdss) of 33V and a continuous current rating of 80A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 11 mOhm at 40A and 10V, a gate charge (Qg) of 50 nC at 10V, and an input capacitance (Ciss) of 1860 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate drive voltage of 10V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for through-hole mounting.
The STP75NS04Z is packaged in a TO-220-3 configuration, with the supplier package being TO-220.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
33 V
TO-220-3 (through-hole)
-55°C to 175°C (junction temperature)
80 A at case temperature (Tc)
11 milliohms maximum at 40 A drain current and 10 V gate voltage
50 nC maximum at 10 V gate voltage
1860 pF maximum at 25 V drain-source voltage