| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 711 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP6NM60N is a power MOSFET manufactured by STMicroelectronics. This N-channel device features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.6A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 920mOhm at 2.3A and 10V gate drive voltage. The input capacitance (Ciss) is 420 pF at 50V, and the gate charge (Qg) is 13 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 45W (Tc) and is available in a TO-220 package with through-hole mounting.
The STP6NM60N is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 (through-hole).
-55°C to 150°C (junction).
4V at 250µA.
920mOhm at 2.3A and 10V.
45W at case temperature.
13nC at 10V.