| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP6NK60Z is a single N-Channel MOSFET manufactured by STMicroelectronics. It offers a high Drain-Source Voltage (Vdss) of 600V and a continuous drain current capability of 6A (Tc).
Key electrical characteristics include a maximum Rds On of 1.2 Ohm at 3A and 10V, a Gate Charge (Qg) of 46 nC at 10V, and an Input Capacitance (Ciss) of 905 pF at 25V. The Gate-to-Source Voltage (Vgs) maximum is ±30V, and the Gate Threshold Voltage (Vgs(th)) is 4.5V maximum at 100µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The STP6NK60Z is packaged in a TO-220-3 case and is designed for Through Hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 6A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 1.2Ohm at 3A drain current and 10V gate-source voltage.
The STP6NK60Z is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at 100µA drain current.
The maximum power dissipation is 110W at case temperature (Tc).