| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,700 pcs
|
9700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
This N-channel Power MOSFET from STMicroelectronics, part number STP6N95K5, is built using SuperMESH™ 5 technology for high efficiency and power density. It offers a drain-source voltage (Vds) of 950V and a continuous drain current (Id) of 9A.
The MOSFET has a maximum on-resistance (Rds(on)) of 1.25 Ohm at 3A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 13 nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 4V at 100µA. It operates within a temperature range of -55°C to 150°C (TJ).
Designed for switching applications, this component comes in a TO-220FP package and is suitable for through-hole mounting. The maximum power dissipation is rated at 90W (Tc).
Key electrical characteristics include a maximum gate-source voltage of ±30V and an input capacitance (Ciss) of 450 pF at 100V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 950V.
The continuous drain current is 9A at case temperature.
The maximum on-resistance is 1.25 ohm at Vgs=10V, Id=3A.
It is available in a TO-220 through-hole package.
The junction operating temperature range is -55°C to 150°C.
The maximum gate charge is 13 nC at Vgs=10V.