| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP6N60M2 is an N-Channel Power MOSFET manufactured by STMicroelectronics. It features a high drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C, with a pulsed drain current (IDM) of 15A. The on-resistance (Rds(on)) is typically 1.2Ω at 2.25A and 10V gate drive voltage.
This MOSFET is designed for applications requiring efficient power conversion, such as Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, and Solar Inverters. Its TO-220 package allows for through-hole mounting and effective heat dissipation, with a maximum power dissipation of 110W at 25°C.
The operating temperature range is from -55°C to +150°C. Key electrical characteristics include a gate charge (Qg) of 15nC typical and input capacitance (Ciss) of 420pF typical. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP6N60M2 is 600V.
The continuous drain current (Id) is 5A at 25°C and 3.2A at 100°C.
The typical on-resistance (Rds(on)) is 1.2Ω.
The STP6N60M2 is supplied in a TO-220 package.
The operating temperature range is -55°C to +150°C.