| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,052 pcs
|
2052 pcs | On Request | 1 | On Request | On Request | 1441+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP6N52K3 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for applications requiring a high drain-source voltage of up to 525V and can handle a continuous drain current of 5A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.2 Ohm when driven at 10V with a drain current of 2.5A. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, and the maximum gate-source voltage is ±30V. Input capacitance (Ciss) is rated at 670 pF at 50V, and gate charge (Qg) is 26 nC at 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STP6N52K3 is supplied in a TO-220 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
525V.
5A at case temperature.
1.2 Ohm maximum at 2.5A and 10V gate drive.
TO-220-3 through-hole package.
150°C.
4.5V maximum at 50µA drain current.
70W at case temperature.