| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP65N150M9 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for applications requiring a high breakdown voltage, rated at 650V.
Key electrical specifications include a continuous drain current of 20A at 25°C and a maximum on-resistance (Rds On) of 150mOhm at 10A and 10V gate-source voltage. The input capacitance (Ciss) is 1239 pF at 400V, and the gate charge (Qg) is a maximum of 32 nC at 10V.
The MOSFET operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 140W. The gate threshold voltage (Vgs(th)) is a maximum of 4.2V at 250µA, and the maximum gate-source voltage (Vgs) is ±30V.
Packaged in a TO-220-3 configuration, the STP65N150M9 is designed for through-hole mounting. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
20A at 25°C.
150mOhm maximum at 10A, 10V.
32nC maximum at 10V.
1239pF maximum at 400V.
150°C junction temperature.
TO-220-3 through-hole package.