| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 743 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP60NH2LL is an N-Channel Power MOSFET designed for demanding switching applications. It utilizes ST's proprietary STripFET™ technology to achieve high efficiency.
Key electrical specifications include a drain-source voltage of 24V and a continuous drain current of 40A at 25°C. The on-resistance (Rds On) is a maximum of 11mOhm at 20A and 10V gate-source voltage. The device features a gate threshold voltage of 1V at 250µA and a maximum gate-source voltage of ±18V.
With a maximum power dissipation of 60W at 25°C, this MOSFET is suitable for applications requiring reduced conduction and switching losses. The operating junction temperature ranges from -55°C to 175°C.
The STP60NH2LL is supplied in a TO-220 package with through-hole mounting. It is packaged in tubes for distribution.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V maximum, with a breakdown voltage of 24V.
40A at 25°C case temperature, 28A at 100°C.
-55°C to 175°C.
11mOhm maximum at 20A drain current and 10V gate-source voltage.
1V maximum at 250µA drain current.
TO-220-3 through-hole package.
27nC maximum at 4.5V gate-source voltage.