| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
335 pcs
|
335 pcs | On Request | 1 | On Request | On Request | 1049 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STP60N3LH5 is an N-channel Power MOSFET designed for switching applications. It utilizes STripFET™ V Power MOSFET technology, offering extremely low on-state resistance and very low switching gate charge.
Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 48A at 25°C. The on-resistance is rated at a maximum of 8.4mOhm at 24A and 10V gate-source voltage. The device also features a low gate charge of 8.8 nC at 5V and a gate-source voltage range of ±20V.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 60W at 25°C.
The STP60N3LH5 is an excellent choice for various switching applications where high efficiency and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
It is available in a TO-220-3 through-hole package.
-55°C to 175°C (junction).
3 V maximum at 250 µA drain current.
48 A at case temperature 25°C.
8.4 mOhm maximum at gate voltage of 10 V and drain current of 24 A.