| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP60N043DM9 from STMicroelectronics, is designed for power applications requiring high voltage and low on-resistance. It features a maximum Drain to Source Voltage (Vdss) of 600V and a low Rds On of 43mOhm, typically measured at 28A drain current and 10V gate-source voltage.
The device has a continuous drain current rating of 56A (at case temperature) and a maximum power dissipation of 245W (at case temperature). The operating temperature range is from -55°C to 150°C (TJ).
Key electrical characteristics include a gate charge of 78.6 nC maximum at 10V Vgs and an input capacitance of 4675 pF maximum at 400V Vds. The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA.
Packaged in a standard TO-220-3 configuration, the STP60N043DM9 is designed for through-hole mounting, making it suitable for various power switching and amplification circuits where robust performance and high voltage handling are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.49 | $11.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600 V.
The STP60N043DM9 is available in a TO-220-3 through-hole package.
The junction operating temperature range is -55°C to 150°C.
The maximum continuous drain current is 56 A at case temperature (Tc).
The maximum on-resistance is 43 mOhm at 28 A drain current and 10 V gate-source voltage.
The maximum gate threshold voltage is 4.5 V at 250 µA drain current.
The maximum gate charge is 78.6 nC at 10 V gate-source voltage.