| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103,020 pcs
|
103020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP5NK50Z is an N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage of 500V and a continuous drain current of 4.4A at case temperature. The on-resistance is 1.5 Ohm maximum at 2.2A drain current and 10V gate-source voltage. Gate charge is 28nC at 10V, and input capacitance is 535pF at 25V drain-source voltage. The gate threshold voltage is 4.5V maximum at 50µA drain current. Maximum gate-source voltage is ±30V. Power dissipation is 70W at case temperature. The device operates over a junction temperature range of -55°C to 150°C. It uses MOSFET (Metal Oxide) technology. The package is TO-220-3 with through-hole mounting, suitable for high-voltage switching applications in power supplies, converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V
TO-220-3 (through-hole)
-55°C to 150°C (junction)
1.5 Ohm maximum at 2.2A, 10V
28nC maximum at 10V
535pF maximum at 25V
4.5V maximum at 50µA