| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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179 pcs
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179 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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The STP5NB80FP is an N-Channel Power MOSFET manufactured by STMicroelectronics, utilizing their PowerMESH™ technology. This advanced MOSFET is designed for high voltage applications, featuring a drain-source voltage rating of 800V.
Key electrical characteristics include a typical Rds(on) of 1.8 Ω at a gate-source voltage of 10V and a continuous drain current of 5A at 25°C. It boasts extremely high dv/dt capability and is 100% avalanche tested, ensuring robust performance in demanding conditions.
Available in both TO-220 and TO-220FP packages, the STP5NB80FP is suitable for various applications including high current, high-speed switching, switch mode power supplies (SMPS), and DC-AC converters for welding equipment and uninterruptible power supplies.
Thermal management is supported by a junction-to-case thermal resistance of 1.13 °C/W for the TO-220 package and 3.1 °C/W for the TO-220FP package. The maximum operating junction temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the STP5NB80FP is 800V when the gate-source voltage (VGS) is 0.
The typical static drain-source on-resistance (Rds(on)) is 1.8 Ω when tested at a gate-source voltage of 10V and a drain current of 2.5A.
The continuous drain current (ID) rating at a case temperature of 25°C is 5A.
The STP5NB80FP is available in TO-220 and TO-220FP packages.
The maximum operating junction temperature (Tj) is 150°C.