| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,520 pcs
|
1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP57N65M5 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. Designed for power applications, it offers a robust 650V drain-to-source voltage (Vdss) and a significant continuous current capability of 42A at the case temperature.
Key electrical characteristics include a maximum gate-to-source voltage of ±25V and a threshold voltage (Vgs(th)) of 5V at 250µA. The input capacitance (Ciss) is rated at 4200 pF at 100V, and the gate charge (Qg) is a maximum of 98 nC at 10V. The on-resistance (Rds On) is specified as a maximum of 63mOhm at 21A and 10V gate drive, ensuring efficient power transfer.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 250W (Tc). It utilizes MOSFET (Metal Oxide) technology and is housed in a standard TO-220-3 package, suitable for through-hole mounting.
The STP57N65M5 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, making it suitable for various industrial and consumer electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The maximum continuous drain current is 42A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 63 milliohms at 21A and 10V gate drive.
It comes in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at 250µA.