| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,450 pcs
|
8450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP55NF06FP is an N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current of 50A at a case temperature (Tc). The on-resistance (Rds On) is a maximum of 18mOhm at 27.5A and 10V gate-source voltage.
This MOSFET is suitable for applications requiring high current handling and low on-resistance. It operates within a temperature range of -55°C to 175°C (TJ). The gate charge (Qg) is 60nC maximum at 10V Vgs, and the input capacitance (Ciss) is 1300pF maximum at 25V Vds. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA.
The STP55NF06FP is designed for through-hole mounting and comes in a TO-220-3 Full Pack package, also referred to as TO-220FP. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
50 A at Tc.
18 mOhm maximum at 27.5A and 10V gate-source voltage.
60 nC at 10V Vgs.
1300 pF at 25V Vds.
-55°C to 175°C.
TO-220-3 Full Pack (TO-220FP) for through-hole mounting.