| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,875 pcs
|
2875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP50NE10 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Tc) of 50A.
This MOSFET utilizes Metal Oxide technology and is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting. Key electrical characteristics include a maximum power dissipation of 180W (Tc) and an Rds On (Max) of 27mOhm at 25A and 10V. The operating temperature range is up to 175°C (TJ).
With a gate threshold voltage of 4V at 250µA and a gate-to-source voltage range of ±20V, the STP50NE10 offers robust performance for various electronic designs. Its input capacitance is rated at 6000 pF at 25V, and the gate charge is 166 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100 V.
The continuous drain current is 50A (Tc).
The maximum power dissipation is 180W (Tc).
The operating temperature is 175°C (TJ).
The STP50NE10 is available in a TO-220-3 package.
The STP50NE10 is mounted using the Through Hole method.