| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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The STP4NK80Z is an N-channel MOSFET from STMicroelectronics, part of the SuperMESH™ series. It is designed for switching applications and features a high drain-source voltage of 800V and a continuous drain current of 3A at 25°C.
Key electrical characteristics include a maximum on-resistance of 3.5 Ohm at 1.5A and 10V, an input capacitance of 575 pF at 25V, and a gate charge of 22.5 nC at 10V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 80W at 25°C.
This MOSFET is housed in a TO-220 package and is suitable for through-hole mounting. It boasts features such as extremely high dv/dt capability, 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances, ensuring good manufacturing repeatability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
4.5V max at 50µA.
3.5 Ohms max at 1.5A, 10V.
3A at Tc=25°C.
80W at Tc=25°C.