STP4NK60Z The STP4NK60Z is an N-Channel Power MOSFET from STMicroelectronics. It features a 600V drain-source voltage and a 4A continuous drain current.
Mfr Part #:

STP4NK60Z

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP4NK60Z is an N-Channel Power MOSFET from STMicroelectronics. It features a 600V drain-source voltage and a 4A continuous drain current.
✓ Total Stock: 24,405 pcs
$ Price Range: $2.56

STP4NK60Z Available from 4 distributors

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12,394 pcs
12394 pcs On Request 1 On Request On Request 11+ On Request On Request
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5,000 pcs
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2,211 pcs
2211 pcs On Request 1 On Request On Request 23+ On Request On Request

STP4NK60Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP4NK60Z Description

Short technical summary and product information.

The STP4NK60Z is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing SuperMESH™ technology. This device is designed for switching applications and offers a 600V drain-source voltage and a continuous drain current of 4A.

 

Key electrical characteristics include a maximum Rds(on) of 2 Ohm at 2A and 10V, a gate-source threshold voltage of 4.5V maximum at 50µA, and a maximum gate charge of 26 nC at 10V. The input capacitance is rated at 510 pF maximum at 25V.

 

This MOSFET has a maximum power dissipation of 70W (Tc) and an operating temperature range up to 150°C (TJ). It is housed in a TO-220-3 package and is designed for through-hole mounting.

 

STMicroelectronics' SuperMESH™ technology optimizes the layout for reduced on-resistance and high dv/dt capability, making it suitable for demanding applications.

STP4NK60Z Quick Information

Product Type: Power MOSFET
Canonical Name: STP4NK60Z N-Channel Power MOSFET
Subcategory: N-Channel

STP4NK60Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP4NK60Z Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP4NK60Z Features

  • 600V drain-source voltage rating.
  • 4A continuous drain current.
  • 2 Ohm maximum Rds(on).
  • TO-220 package for through-hole mounting.
  • N-Channel MOSFET technology.

STP4NK60Z Applications

  • Suitable for high-voltage power supply circuits.
  • Used in switch-mode power converters.
  • Ideal for motor control applications.
  • Applicable in inverter and UPS systems.

STP4NK60Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP4NK60Z?

600V.

What is the continuous drain current rating of the STP4NK60Z?

4A at case temperature.

What is the typical on-resistance (Rds(on)) of the STP4NK60Z?

2 Ohms maximum at 2A drain current and 10V gate drive.

What is the gate threshold voltage of the STP4NK60Z?

4.5V maximum at 50µA.

What is the package type of the STP4NK60Z?

TO-220-3.

What is the maximum junction temperature of the STP4NK60Z?

150°C.

What is the gate charge of the STP4NK60Z?

26 nC maximum at 10V.

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