| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP4N80K5 from STMicroelectronics, offers a high drain-source voltage (Vdss) of 800V and a continuous drain current capability of 3A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.5 Ohm at 1.5A and 10V Vgs, a maximum gate charge (Qg) of 10.5 nC at 10V Vgs, and a gate threshold voltage (Vgs(th)) of 5V at 100µA Id. The device supports a gate-to-source voltage (Vgs) of up to ±30V and requires a drive voltage of 10V for maximum Rds On.
Designed for through-hole mounting, the STP4N80K5 comes in a TO-220-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W (Tc).
This MOSFET utilizes Metal Oxide technology and is suitable for various power switching applications where high voltage and moderate current are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP4N80K5 is 800 V.
The continuous drain current for the STP4N80K5 is 3 A at the case temperature.
The STP4N80K5 is supplied in a TO-220-3 package.
The STP4N80K5 is designed for through-hole mounting.
The operating temperature range for the STP4N80K5 is -55°C to 150°C (TJ).