| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,374 pcs
|
1374 pcs | On Request | 1 | On Request | On Request | 1846+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP4N52K3 is an N-Channel Power MOSFET from STMicroelectronics, part of their SuperMESH3™ technology. This device is designed for demanding switching applications, offering superior dynamic performance and high avalanche capability.
Key electrical specifications include a maximum drain-source voltage (Vds) of 525V and a continuous drain current (Id) of 2.5A at Tc. The maximum on-resistance (Rds On) is 2.6 Ohms at 1.25A and 10V gate-source voltage, with a typical on-resistance of 2.1 Ohms. The gate charge (Qg) is a maximum of 11 nC at 10V, and the input capacitance (Ciss) is 334 pF at 100V.
The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 45W (Tc). It is housed in a TO-220FP package and is designed for through-hole mounting.
This component is suitable for various switching applications, leveraging its optimized vertical structure for low on-resistance and high avalanche capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
525V.
TO-220FP through-hole package.
150°C.
2.5A at case temperature.
2.6Ω at 1.25A and 10V gate drive.
4.5V maximum at 50µA.
11nC at 10V.