| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP4LN80K5 is an N-channel MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at case temperature.
Key electrical characteristics include a maximum gate-to-source voltage (Vgs) of ±30V and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The device features a maximum on-resistance (Rds On) of 2.6 Ohm at 1A and 10V. Input capacitance (Ciss) is rated at 122 pF @ 100V, and gate charge (Qg) is 3.7 nC @ 10V.
With a maximum power dissipation of 60W (Tc), this MOSFET operates within a temperature range of -55°C to 150°C (TJ). The technology employed is MOSFET (Metal Oxide). It is mounted via a through-hole method in a TO-220-3 package.
The STP4LN80K5 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP4LN80K5 is 800V.
The continuous drain current (Id) for the STP4LN80K5 is 3A.
The operating temperature range for the STP4LN80K5 is -55°C to 150°C (TJ).
The STP4LN80K5 is supplied in a TO-220 package with through-hole mounting.
Yes, the STP4LN80K5 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the STP4LN80K5 is 1.