| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | 99+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP45NE06 is an N-Channel STripFET Power MOSFET from STMicroelectronics. It is designed for high current and high-speed switching applications, including motor control, DC-DC converters, and solenoid drivers.
Key electrical characteristics include a drain-source voltage of 60V, a continuous drain current of 45A at 25°C, and a maximum static drain-source on-resistance of 28mΩ at 22.5A and 10V gate-source voltage. The device features a typical Rds(on) of 0.022Ω and a gate charge of 80nC at 10V.
This MOSFET is rated for a maximum continuous drain current of 31A at 100°C and a total power dissipation of 100W at 25°C. It operates at junction temperatures up to 175°C and has a storage temperature range of -65°C to 175°C.
The STP45NE06 is supplied in a TO-220 package with through-hole mounting. It also boasts exceptional dv/dt capability and is 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 45A at a case temperature of 25°C and 31A at 100°C.
The maximum static drain-source on-resistance is 28mOhm at a drain current of 22.5A and gate-source voltage of 10V. The typical on-resistance is 22mOhm.
The STP45NE06 is housed in a TO-220-3 through-hole package.
The maximum operating junction temperature is 175°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum total gate charge is 80nC at a gate-source voltage of 10V.