| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,740 pcs
|
2740 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP45N60DM6 is a single N-Channel MOSFET manufactured by STMicroelectronics. It features a high drain-source voltage rating of 600V and can handle a continuous drain current of 30A at the case temperature.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a standard TO-220 package, suitable for through-hole mounting. Key electrical characteristics include a maximum on-resistance of 99mOhm at 15A and 10V, a gate charge of 44nC, and an input capacitance of 1920pF.
The operating temperature range for this device is -55°C to 150°C (TJ). It is specified with a gate-to-source voltage limit of ±25V and a gate threshold voltage of 4.75V at 250µA.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
30A at case temperature.
99mOhm at 15A and 10V.
-55°C to 150°C junction temperature.
TO-220-3 (through-hole).
4.75V at 250µA.
44nC at 10V.