| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP45N60DM2AG is a single N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for through-hole mounting and comes in a TO-220 package. It offers a high drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of up to 34A at a case temperature (Tc) of 25°C. The maximum power dissipation is rated at 250W (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 93mOhm at 17A and 10V, a gate charge (Qg) of 56nC at 10V, and an input capacitance (Ciss) of 2500pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology. The part is identified by DK Part Number 497-16128-5-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 34A.
The package type is TO-220-3.
It is mounted using the through-hole method.
The operating temperature range is -55°C to 150°C.
The maximum on-resistance is 93mOhm at 17A and 10V.