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STP43N60DM2 The STP43N60DM2 is an N-channel Power MOSFET from STMicroelectronics designed for switching applications. It features a 600V drain-source voltage and 34A continuous current.
Mfr Part #:

STP43N60DM2

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP43N60DM2 is an N-channel Power MOSFET from STMicroelectronics designed for switching applications. It features a 600V drain-source voltage and 34A continuous current.
✓ Total Stock: 15,617 pcs
$ Price Range: $2.56

STP43N60DM2 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request 2107+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,597 pcs
On Request
2597 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,020 pcs
On Request
2020 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STP43N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STP43N60DM2 Description

Short technical summary and product information.

The STP43N60DM2 is a high voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters and is suitable for bridge topologies and ZVS phase-shift converters.

 

Key electrical specifications include a 600V drain-source voltage (VDS), a maximum continuous drain current of 34A at 25°C, and a low on-resistance (RDS(on)) of 93mΩ at 17A and 10V. The device offers a maximum power dissipation of 250W at 25°C and a gate-source voltage range of ±25V.

 

This MOSFET is housed in a TO-220 package with through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The device is 100% avalanche tested and features extremely high dv/dt ruggedness and a fast-recovery body diode.

STP43N60DM2 Quick Information

Product Type: Power MOSFET
Series: MDmesh™ DM2
Canonical Name: STP43N60DM2 N-channel 600 V, 0.093 Ω typ., 34 A MDmesh™ DM2 Power MOSFET
Subcategory: N-Channel

STP43N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP43N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP43N60DM2 Features

  • 600V drain-source breakdown voltage.
  • 34A continuous drain current.
  • Low on-resistance of 93mOhm.
  • 250W maximum power dissipation.
  • TO-220 package for through-hole mounting.

STP43N60DM2 Applications

  • Suitable for high efficiency converters.
  • Ideal for bridge topologies.
  • Used in ZVS phase-shift converters.
  • Designed for demanding switching applications.

STP43N60DM2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP43N60DM2?

600V.

What package does the STP43N60DM2 come in?

TO-220-3 through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the maximum gate threshold voltage?

5V at 250µA drain current.

What is the typical on-resistance?

93mOhm at 17A and 10V gate drive.

What is the maximum gate charge?

56nC at 10V gate-source voltage.

What is the single pulse avalanche energy rating?

800mJ.

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