| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP42N65M5 is an N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power switching. This component features a high drain-to-source voltage rating of 650V and can handle a continuous current of 33A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 79mOhm at 16.5A and 10V gate-to-source voltage, and a gate charge of 100nC. The device operates with a gate-to-source voltage range of ±25V and has a gate threshold voltage of 5V at 250µA.
Packaged in a standard TO-220-3 configuration, the STP42N65M5 is suitable for through-hole mounting. Its maximum power dissipation is rated at 190W (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is well-suited for various power electronics applications requiring robust performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current is 33A at case temperature (Tc).
The maximum on-resistance (Rds On) is 79mOhm at 16.5A drain current and 10V gate voltage.
The STP42N65M5 is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at 250µA drain current.
The maximum gate charge (Qg) is 100nC at 10V gate voltage.