| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP40NF12 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, featuring a robust construction and reliable electrical characteristics.
Key electrical specifications include a maximum Drain-to-Source Voltage (Vdss) of 120V and a continuous Drain Current (Id) of 40A at 25°C. The On-Resistance (Rds On) is specified as a maximum of 32mOhm at 20A and 10V gate drive, ensuring efficient power transfer with minimal losses. The device operates within a temperature range of -55°C to 175°C (TJ).
Packaged in a standard TO-220-3 through-hole configuration, the STP40NF12 is suitable for various power management circuits. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, providing fast switching speeds and low on-state resistance.
This MOSFET is designed for applications requiring high current handling and voltage blocking capabilities. Its specifications make it a suitable choice for power supplies, motor control, and other demanding electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
40A at 25°C.
32mOhm at 20A and 10V gate drive.
-55°C to 175°C junction temperature.
TO-220-3 through-hole package.
4V maximum at 250µA.
80nC maximum at 10V.