| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | 1441+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP3NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-voltage and high-current switching applications. It features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2.5A at 25°C. The MOSFET has a low on-resistance of 4.5 Ohms at a gate-source voltage of 10V and a gate charge (Qg) of 19 nC at 10V.
With a maximum power dissipation of 70W at 25°C, the STP3NK80Z is suitable for demanding power electronics systems. It operates within a temperature range of -55°C to 150°C (TJ). The device utilizes MOSFET (Metal Oxide) technology and is part of the SuperMESH™ series.
Packaged in a standard TO-220-3 configuration, the STP3NK80Z is designed for through-hole mounting, facilitating efficient heat dissipation in power applications. Its robust construction and electrical characteristics make it a reliable choice for AC-DC converters, motor control circuits, and other switching power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220-3 (through-hole).
-55°C to 150°C (junction temperature).
2.5A at 25°C case temperature.
4.5 Ohms at 1.25A and 10V gate drive.
19 nC at 10V gate-source voltage.
70W at 25°C case temperature.