| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,550 pcs
|
4550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
STP3NK60Z is an N-Channel Power MOSFET from STMicroelectronics, rated for a maximum drain-to-source voltage of 600V and continuous drain current of 2.4A. It comes in a TO-220-3 through-hole package suitable for high-voltage switching applications.
Key electrical specifications include a maximum on-resistance of 3.6 Ohm at 1.2A and 10V gate drive, a gate charge of 11.8 nC at 10V, and an input capacitance of 311 pF at 25V. The gate threshold voltage is a maximum of 4.5V at 50µA, with a recommended drive voltage of 10V.
The device operates over a junction temperature range of -55°C to 150°C and can dissipate up to 45W. It is based on MOSFET (Metal Oxide) technology and supports a maximum gate-source voltage of ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
3.6 Ohm at 1.2A, 10V.
11.8 nC at 10V.
311 pF at 25V.
45W (at Tc).