| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP3NK50Z is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 2.3A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance (Rds On) of 3.3 Ohms at 1.15A and 10V Vgs, a gate charge (Qg) of 15 nC at 10V Vgs, and an input capacitance (Ciss) of 280 pF at 25V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 50µA, and the maximum gate-source voltage is ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 package and utilizes through-hole mounting. The technology employed is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-220-3 (through-hole).
-55°C to 150°C (junction temperature).
15 nC at 10V.
3.3 Ohm at 1.15A drain current and 10V gate-source voltage.
2.3A at Tc.
45W at Tc.