| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Operating Temperature | |
| Power Dissipation | |
| Tape & Reel |
The STP3N90 is a high-performance N-Channel Enhancement Mode Power MOS Transistor designed and manufactured by STMicroelectronics. This component is suitable for various power applications requiring a robust and reliable switching solution.
Key electrical specifications include a minimum breakdown voltage of 900V and a typical drain-source resistance of 4.5Ω at VGS=10V. It can handle a typical continuous drain current of 5A and has a maximum power dissipation of 100W. The device operates within a maximum temperature range of 150°C.
The transistor features an N-Channel Enhancement Mode configuration, making it suitable for switching and amplification circuits. Its typical gate threshold voltage (VTH) is 3.5V, and the typical RDS(ON) is 1500mΩ at VGS=10V.
Packaged in the industry-standard TO-220 case with 3 terminals, the STP3N90 is designed for through-hole mounting. Its specifications make it a viable option for power supply designs, motor control, and other high-voltage applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP3N90 has a minimum breakdown voltage of 900V.
The maximum operating temperature for the STP3N90 is 150°C.
The typical RDS(ON) for the STP3N90 is 1500mΩ at VGS=10V.
The STP3N90 is available in a TO-220 package.
The STP3N90 is RoHS3 Compliant.