| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP3N80K5 is a single N-channel MOSFET manufactured by STMicroelectronics. This component is designed for power applications, featuring a high breakdown voltage of 800V and a continuous drain current capability of 2.5A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 3.5 Ohms at 1A and 10V gate-source voltage, a gate threshold voltage of 5V at 100µA, and a gate charge of 9.5 nC at 10V. The input capacitance is rated at 130 pF at 100V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). It is housed in a TO-220-3 package and utilizes through-hole mounting.
The STP3N80K5 is suitable for various power switching circuits where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 800 V.
The continuous drain current is 2.5A at the case temperature.
The Rds On (Max) is 3.5 Ohm when measured at 1A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The STP3N80K5 is supplied in a TO-220-3 package.
The STP3N80K5 is mounted using the through-hole method.