| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP3LN80K5 is an N-Channel MOSFET belonging to the MDmesh™ K5 series. It is designed for applications requiring high voltage capability, featuring a maximum drain-to-source voltage (Vdss) of 800V.
This MOSFET has a continuous drain current (Id) of 2A at 25°C and a maximum power dissipation of 45W (Tc). The on-resistance (Rds On) is specified at a maximum of 3.25 Ohms at 1A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 5V at 100µA, and the maximum gate charge (Qg) is 2.63 nC at 10V.
Packaged in a TO-220-3 configuration, the STP3LN80K5 is suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide).
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 800 V.
The STP3LN80K5 comes in a TO-220-3 through-hole package.
The operating temperature range is -55°C to 150°C (junction).
The maximum on-resistance is 3.25 Ohm at 1A and 10V.
The maximum gate charge is 2.63 nC at 10V.
The maximum power dissipation is 45 W (at case temperature).