| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 744 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP3HNK90Z is an N-channel SuperMESH™ Power MOSFET from STMicroelectronics designed for switching applications. It offers a high drain-source voltage of 800V and a continuous drain current of 3A at 25°C.
Key electrical characteristics include a maximum on-resistance of 4.2 Ohms at 1.5A and 10V, a gate charge of 35 nC at 10V, and a gate threshold voltage of 4.5V at 50µA. The device also features a maximum power dissipation of 90W at 25°C.
This MOSFET is suitable for demanding applications due to its extremely high dv/dt capability and 100% avalanche tested rating. It is packaged in a standard TO-220 package with through-hole mounting.
The operating junction temperature ranges from -55°C to 150°C, and storage temperature is also within this range. The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800V.
The continuous drain current is 3A at a case temperature of 25°C and 1.89A at 100°C.
The maximum on-resistance (Rds(on)) is 4.2 Ohm at a drain current of 1.5A and gate-source voltage of 10V.
The STP3HNK90Z is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at a drain current of 50µA.
The maximum total power dissipation is 90W at a case temperature of 25°C.