| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,181 pcs
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1181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STP38N65M5 is an N-channel MDmesh V Power MOSFET. It utilizes an innovative vertical process technology combined with a PowerMESH horizontal layout structure, resulting in extremely low on-resistance.
Key electrical ratings include a Drain-Source Breakdown Voltage of 650V and a continuous Drain Current of 30A at 25°C, decreasing to 19A at 100°C. The device offers a maximum power dissipation of 190W at 25°C and a maximum continuous Gate-Source Voltage of ±25V.
This MOSFET is available in a TO-220 package, suitable for through-hole mounting. Its design is optimized for applications requiring superior power density and outstanding efficiency, such as general switching applications.
The STP38N65M5 is 100% avalanche tested, ensuring reliability in demanding conditions. Its higher VDSS rating and high dv/dt capability make it a robust choice for various power electronic designs.