| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP36N60M6 is an N-channel Power MOSFET designed for switching applications. It utilizes the MDmesh M6 technology, offering reduced switching losses and improved Rds(on) compared to previous generations.
Key electrical specifications include a drain-source voltage (Vds) of 600V, a maximum continuous drain current of 30A at 25°C, and a maximum on-resistance (Rds On) of 99mOhm at 15A and 10V gate-source voltage. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 208W at 25°C.
This MOSFET is available in a TO-220 package, suitable for through-hole mounting. Its features include low gate input resistance and Zener protection, making it a user-friendly component for various end-application efficiencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600V.
The continuous drain current is 30A at 25°C case temperature.
The maximum on-resistance is 99mOhm at 15A drain current and 10V gate-source voltage.
The STP36N60M6 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4.75V at 250µA drain current.