STP34NM60ND The STP34NM60ND is an N-Channel MOSFET from STMicroelectronics, designed for power switching applications. It offers a 600V drain-source voltage and a 29A current rating.
Mfr Part #:

STP34NM60ND

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP34NM60ND is an N-Channel MOSFET from STMicroelectronics, designed for power switching applications. It offers a 600V drain-source voltage and a 29A current rating.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STP34NM60ND Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

STP34NM60ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP34NM60ND Description

Short technical summary and product information.

The STP34NM60ND is a single N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power applications with a maximum drain-source voltage of 600V and a continuous drain current of 29A at a case temperature.

 

This MOSFET features a low on-resistance of 110mOhm at 14.5A and 10V, with a gate charge of 80.4 nC at 10V. The input capacitance is rated at 2785 pF at 50V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc).

 

Packaged in a TO-220-3 configuration, the STP34NM60ND is suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, providing efficient switching capabilities for various power electronics designs.

 

Key electrical parameters include a gate threshold voltage of 5V at 250µA and a maximum gate-source voltage of ±25V. The drive voltage required for maximum Rds On is 10V.

STP34NM60ND Quick Information

Product Type: MOSFET
Canonical Name: STP34NM60ND N-Channel MOSFET
Subcategory: Single

STP34NM60ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP34NM60ND Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP34NM60ND Features

  • 600V drain-source voltage rating.
  • 29A continuous drain current.
  • Low 110mOhm maximum on-resistance.
  • TO-220 package for through-hole mounting.
  • N-Channel MOSFET technology.

STP34NM60ND Applications

  • Suitable for power switching applications.
  • Ideal for high voltage circuits.
  • Used in power supply designs.
  • Efficient for motor control.

STP34NM60ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STP34NM60ND?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current of the STP34NM60ND?

The continuous drain current is 29A at the case temperature.

What is the maximum on-resistance of the STP34NM60ND?

The maximum on-resistance is 110mOhm at 14.5A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is up to 150°C (TJ).

What package type is the STP34NM60ND supplied in?

The STP34NM60ND is supplied in a TO-220-3 package.

How is the STP34NM60ND mounted?

The STP34NM60ND is designed for through-hole mounting.

What is the gate charge of the STP34NM60ND?

The gate charge (Qg) is a maximum of 80.4 nC at 10V gate-source voltage.

Home
Account

Categories