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STP34N65M5 The STMicroelectronics STP34N65M5 is an N-Channel MOSFET designed for high-voltage applications. It features a 650V drain-source voltage and a continuous drain current of 28A.
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STP34N65M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STP34N65M5 is an N-Channel MOSFET designed for high-voltage applications. It features a 650V drain-source voltage and a continuous drain current of 28A.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STP34N65M5 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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1,000 pcs
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STP34N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STP34N65M5 Description

Short technical summary and product information.

The STMicroelectronics STP34N65M5 is a high-voltage N-Channel MOSFET. It is designed with a drain-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 28A at 25°C. The MOSFET has a low on-resistance (Rds On) of 110mOhm at 14A and 10V gate-source voltage, making it suitable for power switching applications.

 

This device utilizes Metal Oxide Semiconductor (MOSFET) technology. It has a maximum power dissipation of 190W (Tc) and an operating temperature range of -55°C to 150°C (TJ). The gate charge (Qg) is 62.5 nC (max) at 10V, and the input capacitance (Ciss) is 2700 pF (max) at 100V.

 

The STP34N65M5 comes in a TO-220-3 package and is designed for through-hole mounting. Its specifications make it a suitable component for various power electronics designs requiring high voltage and current handling capabilities.

STP34N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STP34N65M5 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STP34N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP34N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP34N65M5 Features

  • 650V drain-source voltage rating.
  • 28A continuous drain current capability.
  • Low 110mOhm Rds On resistance.
  • 190W maximum power dissipation.
  • TO-220 package for through-hole mounting.

STP34N65M5 Applications

  • Suitable for high-voltage power switching.
  • Used in power supply designs.
  • Applicable in motor control circuits.
  • Ideal for DC-DC converters.

STP34N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage rating?

The maximum drain-to-source voltage is 650V.

What is the continuous drain current at 25°C?

The continuous drain current is 28A at a case temperature of 25°C.

What is the maximum on-resistance?

The maximum Rds(on) is 110mOhm at a drain current of 14A and a gate-source voltage of 10V.

What is the gate charge?

The maximum gate charge is 62.5nC at a gate-source voltage of 10V.

What is the input capacitance?

The maximum input capacitance is 2700pF at a drain-source voltage of 100V.

What package is this MOSFET available in?

The STP34N65M5 is available in a TO-220-3 through-hole package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

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