| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,450 pcs
|
2450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STP33N65M2 is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage rating of 650V and a continuous drain current of 24A at a case temperature of Tc. The MOSFET has a maximum power dissipation of 190W (Tc) and a low on-resistance of 140mOhm at 12A and 10V gate-source voltage.
Featuring a gate charge of 41.5nC and input capacitance of 1790pF, this device operates at a maximum junction temperature of 150°C. The STP33N65M2 is suitable for through-hole mounting and comes in a standard TO-220-3 package. Its technology is based on MOSFET (Metal Oxide) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The STP33N65M2 is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.
The continuous drain current is 24A at case temperature.
The maximum on-resistance is 140mOhm at 12A and 10V gate drive.
The maximum gate charge is 41.5nC at 10V.
The maximum input capacitance is 1790pF at 100V drain-source.