STP33N60M2 The STP33N60M2 is an N-channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 26A continuous current rating. It is housed in a TO-220 package and designed for through-hole mounting.
Mfr Part #:

STP33N60M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP33N60M2 is an N-channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 26A continuous current rating. It is housed in a TO-220 package and designed for through-hole mounting.
✓ Total Stock: 1,200 pcs
$ Price Range: $2.56

STP33N60M2 Available from 1 distributor

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✓ Non-Authorised
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STP33N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP33N60M2 Description

Short technical summary and product information.

This STMicroelectronics STP33N60M2 is a single N-channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 600V and a continuous drain current capability of 26A at the case temperature.

 

The MOSFET features a low on-state resistance of 125mOhm maximum at 13A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 45.5nC maximum at 10V and an input capacitance (Ciss) of 1781pF maximum at 100V.

 

With a maximum power dissipation of 190W at the case temperature, this device is suitable for various power applications. The operating temperature range is from -55°C to 150°C (TJ). The STP33N60M2 utilizes MOSFET technology and is packaged in a standard TO-220-3 configuration.

 

Designed for through-hole mounting, this component is ideal for applications requiring robust power handling and reliable switching performance. The gate threshold voltage is 4V maximum at 250µA, and the maximum gate-to-source voltage is ±25V.

STP33N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STP33N60M2 N-Channel MOSFET
Subcategory: Single

STP33N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STP33N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP33N60M2 Features

  • 600V drain-source voltage rating.
  • 26A continuous drain current.
  • Low Rds On: 125mOhm max at 13A, 10V.
  • TO-220 package for through-hole mounting.
  • N-channel MOSFET technology.

STP33N60M2 Applications

  • Power supply circuits.
  • Motor control applications.
  • Switching power supplies.
  • General purpose power switching.

STP33N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STP33N60M2?

The maximum drain-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The continuous drain current is 26A at case temperature (Tc).

What is the on-resistance of the STP33N60M2?

The maximum on-resistance is 125 milliohms at 13A drain current and 10V gate-source voltage.

What package type is the STP33N60M2 available in?

It comes in a TO-220-3 through-hole package.

What is the operating temperature range of the STP33N60M2?

The junction operating temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.

What is the total gate charge of the STP33N60M2?

The maximum gate charge (Qg) is 45.5 nC at a gate-source voltage of 10V.

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