| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,091 pcs
|
1091 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP33N60DM6 is an N-Channel MOSFET developed by STMicroelectronics, designed for high-voltage switching applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at case temperature (Tc). The device offers a low on-resistance (Rds(on)) of 128 mOhm maximum at 12.5A and 10V gate-source voltage, enabling efficient power conversion.
The MOSFET incorporates a gate charge (Qg) of 35 nC at 10V and an input capacitance (Ciss) of 1500 pF at 100V, which contribute to manageable switching losses. The gate threshold voltage (Vgs(th)) is 4.75V maximum at 250 µA, and the gate-source voltage (Vgs) range is ±25V. It is rated for a maximum power dissipation of 190W at Tc.
Packaged in a TO-220-3 through-hole package, the STP33N60DM6 is suitable for automated and manual assembly. The operating junction temperature range is -55°C to 150°C, allowing use in demanding environments. The component is intended for applications such as power supplies, motor controls, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current (Id) is 25A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 128 mOhm at 12.5A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 4.75V at 250µA drain current.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-220-3 through-hole package.
The maximum power dissipation (Pd) is 190W at case temperature (Tc).