| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,021 pcs
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3021 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STP33N60DM2 is a high-voltage N-channel Power MOSFET belonging to the MDmesh™ DM2 fast recovery diode series. It offers a continuous drain current of 24A at 25°C and a drain-source voltage of 600V.
Key electrical characteristics include a low on-resistance of 130mΩ maximum at 12A and 10V, a gate charge of 43nC maximum at 10V, and input capacitance of 1870pF maximum at 100V. The device also features a maximum gate-source voltage of ±25V and a gate threshold voltage of 5V at 250µA.
Designed for demanding high-efficiency converters, this MOSFET is suitable for bridge topologies and ZVS phase-shift converters. It boasts a fast-recovery body diode, extremely low gate charge, and input capacitance, along with low on-resistance and high dv/dt ruggedness. The device is 100% avalanche tested.
The STP33N60DM2 is packaged in a TO-220 package with through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600 V.
The continuous drain current (Id) at 25°C is 24 A.
The maximum on-resistance (Rds(on)) is 130mΩ at 12A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The STP33N60DM2 is supplied in a TO-220-3 package.