| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63 pcs
|
63 pcs | On Request | 1 | 33 | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing |
The STP33N10 is an N-CHANNEL POWER MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications and features a Drain-Source Voltage rating of 100V. It is supplied in the TO-220AB package, which is suitable for through-hole mounting.
As a power MOSFET, the STP33N10 is characterized by its ability to handle significant current and voltage levels efficiently. Its specific electrical characteristics, such as on-state resistance and switching speed, are detailed in the manufacturer's datasheet. The TO-220AB package offers good thermal performance and ease of integration into various electronic circuits.
This MOSFET is a component within the broader category of discrete semiconductor products, specifically transistors. Its design makes it suitable for applications requiring robust power handling capabilities. Further details regarding its performance parameters and application suitability can be found in the official STMicroelectronics documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage for the STP33N10 is 100V.
The STP33N10 MOSFET is supplied in the TO-220AB package.
The RoHS status of the STP33N10 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STP33N10 is 1 Unlimited.
The REACH status for the STP33N10 is REACH Unaffected.