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STP30N10F7 The STP30N10F7 is an N-Channel MOSFET from STMicroelectronics with a 100V drain-source voltage and 32A continuous drain current. It is supplied in a TO-220AB package.
Mfr Part #:

STP30N10F7

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP30N10F7 is an N-Channel MOSFET from STMicroelectronics with a 100V drain-source voltage and 32A continuous drain current. It is supplied in a TO-220AB package.
✓ Total Stock: 1,044 pcs
$ Price Range: $2.56

STP30N10F7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
44 pcs
On Request
44 pcs On Request 1 On Request On Request On Request On Request On Request
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STP30N10F7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STP30N10F7 Description

Short technical summary and product information.

The STP30N10F7 is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 32A at 25°C (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 24mOhm at 16A and 10V, a gate threshold voltage (Vgs(th)) of 4.5V at 250µA, and a maximum gate charge (Qg) of 19nC at 10V. The input capacitance (Ciss) is 1270pF at 50V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 50W (Tc). It features a gate-to-source voltage (Vgs) limit of ±20V.

 

The STP30N10F7 is mounted through hole and comes in a TO-220-3 package, with the supplier device package specified as TO-220AB. Its technology is MOSFET (Metal Oxide).

STP30N10F7 Quick Information

Product Type: MOSFET
Canonical Name: STP30N10F7 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STP30N10F7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP30N10F7 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP30N10F7 Features

  • 100V drain-source voltage rating.
  • 32A continuous drain current capability.
  • Low 24mOhm maximum on-resistance.
  • TO-220AB package for through-hole mounting.
  • Wide operating temperature range.

STP30N10F7 Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for motor control applications.
  • Applicable in power supply units.

STP30N10F7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the STP30N10F7?

The drain-to-source voltage (Vdss) is 100 V.

What is the continuous drain current for the STP30N10F7?

The continuous drain current (Id) is 32A at 25°C (Tc).

What is the maximum on-resistance of this MOSFET?

The Rds On is a maximum of 24mOhm at 16A and 10V.

What is the operating temperature range for the STP30N10F7?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the STP30N10F7 supplied in?

The STP30N10F7 is supplied in a TO-220-3 package.

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