| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | 752 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP300NH02L is an N-Channel enhancement mode MOSFET manufactured by STMicroelectronics. It is designed for high-current switching applications requiring low on-resistance. The device is rated for a maximum drain-to-source voltage of 24V and a continuous drain current of 120A at case temperature (Tc). With a maximum on-resistance of 2.2mOhm at 80A and 10V gate drive, it offers efficient power conversion.
Electrical characteristics include a maximum gate charge of 109.4nC at 10V and input capacitance of 7055pF at 15V drain-source voltage. The gate threshold voltage is 2V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±20V. The device operates over a junction temperature range of -55°C to 175°C.
The STP300NH02L is offered in the industry-standard TO-220-3 package, which is suitable for through-hole mounting and provides good thermal performance. This device is ideal for use in DC-DC converters, power management circuits, and other low-voltage high-current switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP300NH02L is available in a TO-220-3 package.
The junction temperature range is -55°C to 175°C.
The maximum continuous drain current is 120A at case temperature.
The maximum on-resistance is 2.2mOhm at 80A drain current and 10V gate-source voltage.